R&D Systems for MEMS Manufacturing
Oxide and Silicon Etch Development Platform for Cost-effective MEMS Research
memsstar’s ORBIS™ ALPHA system is a low-cost, small footprint, self-contained version of our proven XERIC™ oxide and silicon etch processes designed to meet the price and performance requirements of the institutional and academic markets. It includes fully integrated process monitoring and endpoint control, a high-selectivity package and a proven hardware that delivers excellent uniformity and repeatability, critical to improving yield.
The ALPHA system allows for all the capability of memsstar’s unique patented high volume production process to enable researchers to develop production-capable processes for the next generation of MEMS devices.
The ORBIS ALPHA system is available as a silicon etch module utilizing xenon difluoride or as an oxide etch module utilizing hydrogen fluoride etchants.
memsstar’s XERIC Silicon Etch
Used for dry processing, the XERIC silicon etch system utilises vapor phase dry release etching with xenon difluoride providing continuous flow design for the etch material. The patented memsstar XERIC sacrificial vapor release XeF2 process is highly selective to a range of materials including SiO2, Si3N4. This process means that large undercuts of structures can be performed with no degradation in etch rate and a wide range of films including all forms of silicon can be etched.
Find out more about the XERIC Silicon Etch
memsstar’s XERIC Oxide Etch
This is a patented process which is compatible with a wide range of metals utilising vapor phase dry release with anhydrous HF (hydrogen fluoride) and has market leading selectivities towards Si3N4. The XERIC oxide etch HF sacrificial release system offers a variety of benefits to companies who are engaged in MEMS manufacturing and development.
Find out more about the XERIC Oxide Etch
| ORBIS ALPHA Key Features | |
|---|---|
| Key characteristics | Large process window to optimize process for any structure Excellent selectivity with silicon nitride and silicon dioxide (<5% 1σ) High selectivity to underlayer and mechanical materials Industry-leading etch rates High etch rates for undercut and blanket Si Excellent uniformity (<5% 1σ) Excellent repeatability (<5% 1σ) No corrosion No stiction In-line controls—etch rate monitor, endpoint, temperature Unique endpoint capability Self contained, on-board etchants (XeF2 or HF) Handles materials from sample sizes to 200mm Small footprint (Alpha Silicon: 600 x 540 x 900 mm | Alpha Oxide: 600 x 760 x 900 mm) DeviceNet control LabVIEW control system PC controlled Resistive touch screen |
| Application examples | Sensors, RF MEMS, micro bolometer arrays, accelerometers, RF switches, temperature gauges |
FAQs
1. What is the memsstar ORBIS™ ALPHA™ system used for?
The memsstar ORBIS™ ALPHA™ system is a low-cost, small-footprint, self-contained version of memsstar’s proven XERIC™ oxide and silicon etch processes designed to meet the price/performance requirements of the institutional and academic markets. It brings the full capability of memsstar’s patented high-volume production process into a lab-scale platform, enabling researchers to develop production-capable processes for the next generation of MEMS devices. Typical applications include sensors, radiofrequency (RF) MEMS, microbolometer arrays, accelerometers, RF switches, and temperature gauges.
2. Who is ORBIS ALPHA designed for?
ORBIS ALPHA is built specifically for R&D, institutional, and academic environments where cost and footprint matter as much as performance. It delivers a high-selectivity package and proven hardware with excellent uniformity and repeatability – capabilities critical to improving yield – in a compact, self-contained format. Because it runs the same patented processes as memsstar’s high-volume tools, researchers can develop processes in the lab that are ready to scale to production.
3. What etch chemistries and configurations does ORBIS ALPHA support?
ORBIS ALPHA is available in two configurations: a silicon etch module using xenon difluoride (XeF₂) or an oxide etch module using hydrogen fluoride (HF) etchants. The XERIC silicon etch uses vapour-phase dry release with XeF₂ in a continuous-flow design that is highly selective to materials including silicon dioxide and silicon nitride (Si₃N₄), allowing large undercuts with no degradation in etch rate. The XERIC oxide etch is a patented process compatible with a wide range of metals, using anhydrous HF with market-leading selectivity toward Si₃N₄.
4. What performance and process control advantages does ORBIS ALPHA deliver?
ORBIS ALPHA combines a large process window with excellent selectivity to Si₃N₄ and high selectivity to underlayer and mechanical materials. It delivers industry-leading etch rates – including high etch rates for undercut and blanket wafers – alongside excellent uniformity (<5% 1σ) and repeatability (<5% 1σ), with no corrosion or stiction. In-line controls for etch rate and temperature, plus a unique endpoint capability, give researchers precise, repeatable control over every run.
5. What are ORBIS ALPHA’s form factor and control specifications?
ORBIS ALPHA is a fully self-contained system with on-board etchants (XeF₂ or hydrogen fluoride) and a compact footprint, making it well suited to space-constrained research labs. It handles materials ranging from small sample wafer sizes up to 200mm wafers. The system is PC-controlled with a LabVIEW control system, DeviceNet control, and a resistive touchscreen interface for straightforward operation.
